Increased InAs quantum dot size and density using bismuth as a surfactant
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چکیده
Articles you may be interested in RHEED transients during InAs quantum dot growth by MBE Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a " nucleation-augmented " method Appl. Area-controlled growth of InAs quantum dots and improvement of density and size distribution Appl. Anomalous temperature dependence of photoluminescence from InAs quantum dots
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